Сканирующая туннельная микроскопия в халькогенидных термоэлектриках (Bi, Sb)-=SUB=-2-=/SUB=-(Te, Se, S)-=SUB=-3-=/SUB=-
نویسندگان
چکیده
The morphology studies of the interlayer surface (0001) were carried out by method scanning tunneling microscopy in n–Bi1.6Sb0.4Te2.94Se0.06, n- Bi1.8Sb0.2Te2.82Se0.09S0.09, p-Bi0.8Sb1.2Te2.91Se0.09 and p-Bi0.7Sb1.3Te2.91Se0.09 solid solutions. On (0001), impurity native defects found (vacancies tellurium, antisite defects, adatoms), formed compositions due to substitutions atoms Bi2Te3 sublattices. average values HM standard deviations HS height distribution on are determined depending composition solution. effect detected thermoelectric properties solutions has been established.
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ژورنال
عنوان ژورنال: Fizika i tehnika poluprovodnikov
سال: 2022
ISSN: ['0015-3222', '1726-7315']
DOI: https://doi.org/10.21883/ftp.2022.01.51806.22